Title :
DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe
Author :
Nadella, Ravi K. ; Vellanki, Jayadev ; Rao, Mulpuri V. ; Dietrich, Harry B.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
A vertical p-i-n diode is made for the first time in InP:Fe using megaelectronvolt energy ion implantation, A 20-MeV Si implantation and kiloelectronvolt energy Be/P coimplantation are used to obtain a buried n/sup +/ layer and a shallow p/sup +/ layer, respectively. The junction area of the device is 2.3*10/sup -5/ cm/sup 2/ and the intrinsic region thickness is approximately=3 mu m. The device has a high breakdown voltage of 110 V, reverse leakage current of 0.1 mA/cm/sup 2/ at -80 V, off-state capacitance of 2.2 nF/cm/sup 2/ at -20 V, and a DC incremental forward resistance of 4 Omega at 40 mA.<>
Keywords :
III-V semiconductors; capacitance; electric breakdown of solids; indium compounds; ion implantation; iron; leakage currents; p-i-n diodes; 110 V; 20 MeV; 4 ohm; 40 mA; DC characteristics; DC incremental forward resistance; InP:Fe; InP:Fe,Si-InP:Fe,Be,P; buried n/sup +/ layer; coimplantation; high-breakdown-voltage; intrinsic region thickness; ion implantation; junction area; off-state capacitance; reverse leakage current; shallow p/sup +/ layer; vertical p-i-n diode; Annealing; Capacitance; Electrons; Etching; Indium phosphide; Microwave devices; P-i-n diodes; PIN photodiodes; Student members; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
