• DocumentCode
    848759
  • Title

    Integrated InP/GaInAs heterojunction bipolar photoreceiver

  • Author

    Chandrasekhar, S. ; Campbell, Joe C. ; Dentai, A.G. ; Joyner, Charles H. ; Qua, G.J. ; Gnauck, A.H. ; Feuer, Mark D.

  • Author_Institution
    AT&T Bell Labs., Homdel, NJ
  • Volume
    24
  • Issue
    23
  • fYear
    1988
  • fDate
    11/10/1988 12:00:00 AM
  • Firstpage
    1443
  • Lastpage
    1445
  • Abstract
    The authors report the first integrated photodetector-preamplifier circuit implemented with InP/GaInAs heterojunction bipolar transistors. The circuit consists of a three-terminal phototransistor, three bipolar transistors and three resistors. A receiver sensitivity of -26 dBm at 100 Mbit/s has been achieved
  • Keywords
    III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; preamplifiers; receivers; InP-GaInAs; heterojunction bipolar transistors; integrated heterojunction bipolar photoreceiver; integrated photodetector-preamplifier circuit; receiver sensitivity; resistors; three-terminal phototransistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    46097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=848759