DocumentCode
848781
Title
GaAs MESFET laser-driver IC for 1.7-Gbit/s lightwave transmitter
Author
Chen, F.S. ; Bosch, F.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
6
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
475
Lastpage
479
Abstract
GaAs monolithic integrated circuits for modulating junction lasers (laser drivers) have been developed for a 1.7-Gb/s lightwave communication system. The modulation currents can be varied continuously from a few mA up to 50 or 100 mA, depending on the types of laser drivers. It has been demonstrated that devices of the low-current type are capable of driving a 50-Ω load with a 50-mA modulation current with pulse rise and fall times (10% to 90%) less than 200 ps, and the high-current devices are capable of driving a 25-Ω load with up to 100-mA modulation current with pulse rise and fall times less than 250 ps. Nearly temperature-independent performance has been achieved from 0°C to 70°C. The laser drivers are also capable of providing output DC currents proportional to the duty cycle of input data for the purpose of duty-cycle-independent feedback control of junction lasers. The circuit designs and performance of these devices are described
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; optical communication equipment; optical modulation; transmitters; 0 to 70 degC; 1.7 Gbit/s; 5 mA to 100 mA; GaAs monolithic integrated circuit; MESFET; duty-cycle-independent feedback control; integrated circuits; junction lasers; laser drivers; laser-driver IC; lightwave communication system; lightwave transmitter; modulation currents; semiconductors; Driver circuits; Feedback circuits; Feedback control; Gallium arsenide; Laser feedback; MESFET integrated circuits; Power lasers; Pulse modulation; Temperature; Transmitters;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.4025
Filename
4025
Link To Document