Parallel hot-carrier-induced degradation mechanisms in hydrogen-passivated polysilicon-on-insulator LDD p-MOSFET´s

Author

Bhattacharya, S. ; Kovelamudi, R. ; Batra, S. ; Banerjee, S. ; Nguyen, B.Y. ; Tobin, P.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

13

Issue

9

fYear

1992

Firstpage

491

Lastpage

493

Abstract

Hot-carrier-induced stressing has been shown to degrade hydrogen-passivated p-channel polysilicon-on-insulator (poly-SOI) MOSFETs by two parallel degradation mechanisms. The authors observe hot-carrier-induced degradation of hydrogen passivation at grain boundaries through the creation of additional donor-type grain boundary states in the channel, as well as hot-electron trapping in the gate oxide. Due to the presence of both of these degradation mechanisms, p-channel polysilicon lightly doped source and drain (LDD) MOSFETs exhibit anomalous hot-carrier-induced degradation behavior that has not been observed in bulk p-MOSFETs.<>

Keywords

defect electron energy states; electron traps; elemental semiconductors; grain boundaries; hot carriers; insulated gate field effect transistors; passivation; semiconductor device testing; semiconductor-insulator boundaries; silicon; H/sub 2/ passivation; Si-SiO/sub 2/; donor-type grain boundary states; gate oxide; grain boundaries; hot-carrier-induced degradation mechanisms; hot-electron trapping; polysilicon SOI LDD pMOSFET; Degradation; Grain boundaries; Grain size; Hot carriers; Hydrogen; MOSFET circuits; Monitoring; Senior members; Stress; Student members;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192805

Filename

192805