Title :
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
Author :
Bhatnagar, M. ; McLarty, Peter K. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
The authors describe the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm/sup 2/ for a temperature range of 25 to 200 degrees C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25 degrees C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers.<>
Keywords :
Schottky-barrier diodes; platinum; power electronics; semiconductor materials; silicon compounds; solid-state rectifiers; 1.1 V; 25 to 200 C; 400 V; 6H-SiC; Pt-SiC; Schottky barrier diodes; breakdown voltages; characteristics; fabrication; forward I-V characteristics; forward voltage drop; on-state current density; rectifiers; reverse I-V characteristics; reverse recovery characteristics; sharp breakdown; temperature range; Breakdown voltage; Current density; Current measurement; Density measurement; Fabrication; Low voltage; P-i-n diodes; Schottky barriers; Schottky diodes; Temperature distribution;
Journal_Title :
Electron Device Letters, IEEE
