InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with a carbon-doped base grown by MOCVD

Author

Hanson, A.W. ; Stockman, S.A. ; Stillman, G.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

13

Issue

10

fYear

1992

Firstpage

504

Lastpage

506

Abstract

InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBTs) utilizing a carbon-doped base have been demonstrated. The devices were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using carbon tetrachloride (CCl/sub 4/) as the p-type dopant source. These devices exhibit a DC common-emitter current gain of 50 and an emitter-base junction ideality factor of 1.29 in a structure for which no undoped spacer layer was employed at the emitter-base junction. These preliminary results suggest that C-doping of In/sub 0.53/Ga/sub 0.47/As may be a suitable alternative to Zn in MOCVD-grown InP/In/sub 0.53/Ga/sub 0.47/As HBTs.<>

Keywords

III-V semiconductors; carbon; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; vapour phase epitaxial growth; In/sub 0.53/Ga/sub 0.47/As:C; InP-In/sub 0.53/Ga/sub 0.47/As; MOCVD; carbon tetrachloride; current gain; dopant source; emitter-base junction ideality factor; metalorganic chemical vapor deposition; p-type doping; semiconductors; Carbon dioxide; Chemical vapor deposition; Doping; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; MOCVD; Optical devices; Temperature; Zinc;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192815

Filename

192815