Title :
Time-dependent dielectric breakdown characteristics of N/sub 2/O oxide under dynamic stressing
Author :
Ahn, J. ; Joshi, A. ; Lo, G.Q. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Time-dependent dielectric breakdown (TDDB) characteristics of MOS capacitors with thin (120-AA) N/sub 2/O gate oxide under dynamic unipolar and bipolar stress have been studied and compared to those with control thermal gate oxide of identical thickness. Results show that N/sub 2/O oxide has significant improvement in t/sub BD/ (2*under-V/sub g/ unipolar stress, 20*under+V/sub g/ unipolar stress, and 10*under bipolar stress). The improvement of t/sub BD/ in N/sub 2/O oxide is attributed to the suppressed electron trapping and enhanced hole detrapping due to the nitrogen incorporation at the SiO/sub 2//Si interface.<>
Keywords :
capacitors; dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; oxidation; reliability; silicon compounds; 120 A; MOS capacitors; N/sub 2/O ambient grown oxides; Si/sub x/N/sub y/O/sub z/ oxides; Si/sub x/N/sub y/O/sub z/-Si; TDDB; bipolar stress; control thermal gate oxide; dynamic stressing; enhanced hole detrapping; suppressed electron trapping; time dependent dielectric breakdown; unipolar stress; Charge carrier processes; Dielectric breakdown; Electric breakdown; Electron traps; Frequency estimation; MOS devices; Stress control; Thermal stresses; Thickness control; Voltage;
Journal_Title :
Electron Device Letters, IEEE
