Silicon-on-insulator approach for power IC´s integrating vertical DMOS and polycrystalline silicon CMOS thin-film transistors

Author

Dolny, Gary M. ; Ipri, Alfred C. ; Nostrand, Gerald E. ; Wheatley, C.F. ; Wodarczyk, Paul J.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

13

Issue

10

fYear

1992

Firstpage

516

Lastpage

518

Abstract

A novel approach for the monolithic integration of low-voltage logic and analog control circuits with vertical-current flow power transistors is described. This is achieved by fabricating a CMOS device family, using polycrystalline-silicon thin-film transistors (TFTs), on the field oxide of a single-crystal power device. Parasitic interactions between the control and power devices are eliminated in a simple, inexpensive, and easily manufacturable process. The technology is capable of supporting both MOS and bipolar power devices and the presence of the TFT circuits places no restriction on the maximum voltage or current of the power device. The TFTs exhibit good electrical characteristics and the power devices are not compromised by the addition of the TFT control circuits. This concept is demonstrated by the fabrication of a vertical DMOS power transistor with >100-V, >45-A capability, monolithically integrated with current-limiting and temperature-limiting functions.<>

Keywords

CMOS integrated circuits; MOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; power integrated circuits; semiconductor-insulator boundaries; thin film transistors; 100 V; 45 A; CMOS device family; CMOS thin-film transistors; MOS power devices; TFT control circuits; analog control circuits; bipolar power devices; crystalline Si; current limiting functions; easily manufacturable process; fabrication; field oxide; low-voltage logic; monolithic integration; polycrystalline Si; power ICs; single-crystal power device; smart power; temperature-limiting functions; vertical DMOS; vertical DMOS power transistor; vertical-current flow power transistors; CMOS logic circuits; CMOS technology; Logic circuits; Logic devices; Manufacturing processes; Monolithic integrated circuits; Power integrated circuits; Power transistors; Silicon on insulator technology; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192819

Filename

192819