Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED´s)

Author

D´Asaro, L.A. ; Chirovsky, L.M.F. ; Laskowski, E.J. ; Pei, S.-S. ; Leibenguth, R.E. ; Woodward, T.K. ; Focht, M. ; Lentine, A.L. ; Asom, M.T. ; Guth, G. ; Kopf, R.F. ; Kuo, J.M. ; Pearton, S.J. ; Przybylek, G.J. ; Ren, F. ; Smith, L.E.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

13

Issue

10

fYear

1992

Firstpage

528

Lastpage

531

Abstract

The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoelectronic circuits. A single MBE growth sequence provides for quantum-well modulators, photodiodes, doped channel MIS-like field-effect transistors (DMTs), and resistors. The device dimensions are controlled in a planar technology using ion implantation and selective plasma etching for isolation and contacting. Results demonstrate optical amplification in a fully integrated circuit. This technology will enable increased functionality by providing digital electronic processing between optical input and output.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; field effect integrated circuits; gallium arsenide; integrated optoelectronics; ion implantation; molecular beam epitaxial growth; semiconductor quantum wells; sputter etching; DMTs; FET-SEED; GaAs-Al/sub x/Ga/sub 1-x/As; device dimensions; digital electronic processing; doped channel MISFETs; fabrication; flexible design; high-yield optoelectronic circuits; integrated circuit; integrated optoelectronic amplifier; ion implantation; optical amplification; photodiodes; planar technology; process technology; quantum-well modulators; resistors; selective plasma etching; semiconductors; single MBE growth; smart pixel; structure; trench isolation; Flexible printed circuits; Integrated circuit technology; Integrated optoelectronics; Isolation technology; Optical amplifiers; Optical device fabrication; Prototypes; Quantum well devices; Smart pixels; Stimulated emission;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192823

Filename

192823