DocumentCode :
848910
Title :
Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED´s)
Author :
D´Asaro, L.A. ; Chirovsky, L.M.F. ; Laskowski, E.J. ; Pei, S.-S. ; Leibenguth, R.E. ; Woodward, T.K. ; Focht, M. ; Lentine, A.L. ; Asom, M.T. ; Guth, G. ; Kopf, R.F. ; Kuo, J.M. ; Pearton, S.J. ; Przybylek, G.J. ; Ren, F. ; Smith, L.E.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Volume :
13
Issue :
10
fYear :
1992
Firstpage :
528
Lastpage :
531
Abstract :
The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoelectronic circuits. A single MBE growth sequence provides for quantum-well modulators, photodiodes, doped channel MIS-like field-effect transistors (DMTs), and resistors. The device dimensions are controlled in a planar technology using ion implantation and selective plasma etching for isolation and contacting. Results demonstrate optical amplification in a fully integrated circuit. This technology will enable increased functionality by providing digital electronic processing between optical input and output.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; field effect integrated circuits; gallium arsenide; integrated optoelectronics; ion implantation; molecular beam epitaxial growth; semiconductor quantum wells; sputter etching; DMTs; FET-SEED; GaAs-Al/sub x/Ga/sub 1-x/As; device dimensions; digital electronic processing; doped channel MISFETs; fabrication; flexible design; high-yield optoelectronic circuits; integrated circuit; integrated optoelectronic amplifier; ion implantation; optical amplification; photodiodes; planar technology; process technology; quantum-well modulators; resistors; selective plasma etching; semiconductors; single MBE growth; smart pixel; structure; trench isolation; Flexible printed circuits; Integrated circuit technology; Integrated optoelectronics; Isolation technology; Optical amplifiers; Optical device fabrication; Prototypes; Quantum well devices; Smart pixels; Stimulated emission;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.192823
Filename :
192823
Link To Document :
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