Abstract :
The commenter points out a discrepancy between the results in the above-titled paper (ibid., vol.13, p.149-51, 1992) and those of C.P. Lee et al. (ibid., vol. EDL-3, p.97-8, 1982). He emphasizes that trap-fill-limited (TFL) conduction and trap-impact ionization are important mechanisms causing high substrate leakage current and backgating effect of GaAs MESFETs. He suggests that the dependence of the backgating and leakage current threshold voltage V/sub BGT/ on the source-to-drain bias V/sub DS/ of the MESFET can be used to experimentally evaluate if the observed backgating effect and leakage current are caused by mechanisms related to n-i-n or Schottky-i-n structures. The authors, in reply, amplify on the commenter´s remarks and explain the discrepancy.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs MESFETs; GaAs devices; Schottky contact effects; Schottky-i-n structures; backgating effect; comments and reply; discrepancy explained; n-i-n structures; semiconductors; sidegating effect; source-to-drain bias; substrate leakage current; trap-fill-limited conduction; trap-impact ionization; Degradation; Electron devices; FETs; Gallium arsenide; Hysteresis; Impact ionization; Leakage current; MESFETs; Schottky barriers; Threshold voltage;
