Title :
A new method of determination of the I-V characteristics of negative differential conductance devices
Author :
Hwu, R.J. ; Abhyankar, A.M.
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
A method for mapping the complete I-V characteristic of a negative differential conductance (NDC) device has been investigated. This method employs the measurable positive differential conductance (PDC) portions of the DC I-V curve together with the measured conductances at a fixed DC bias voltage in the PDC region with different RF signal levels using a standard semiconductor analyzer. The NDC regime of the I-V curve is numerically constructed from the measured conductances at a fixed DC bias voltage in the PDC region with different signal levels using a large-signal nonlinear-circuit analysis.<>
Keywords :
electric current measurement; negative resistance; tunnel diodes; voltage measurement; DC I-V curve; I-V characteristics; NDC regime; RF signal levels; complete I-V characteristic mapping; large-signal nonlinear-circuit analysis; negative differential conductance devices; numerical reconstruction; semiconductor analyzer; tunnel diodes; Circuit synthesis; Current measurement; Hysteresis; Measurement standards; Power measurement; Quantum well devices; Resonant tunneling devices; Signal analysis; Student members; Voltage;
Journal_Title :
Electron Device Letters, IEEE
