• DocumentCode
    848983
  • Title

    Substrate crosstalk reduction using low-resistivity

  • Author

    Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P.

  • Author_Institution
    ENSEEIHT, Toulouse, France
  • Volume
    39
  • Issue
    25
  • fYear
    2003
  • Firstpage
    1811
  • Lastpage
    1813
  • Abstract
    A full-wave analysis extending the transverse resonance
  • Keywords
    BiCMOS integrated circuits; buried layers; crosstalk; dielectric losses; integrated circuit noise; isolation technology; semiconductor epitaxial layers; spectral-domain analysis; BiCMOS structures; buried epitaxial layers; conductor losses; dielectric losses; full-wave analysis; inhomogeneous stacks; isolation performances; line spacing; low-resistivity localised diffusions; noise coupling effects; spectral domain; substrate crosstalk reduction; substrate thickness; transverse resonance technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20031171
  • Filename
    1255728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=848983