An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET´s

Author

Agostinelli, V.M., Jr. ; Bordelon, T.J. ; Wang, X.L. ; Yeap, C.F. ; Maziar, C.M. ; Tasch, A.F.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

11

fYear

1992

Firstpage

554

Lastpage

556

Abstract

A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOSFETs is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model is implemented as a post-processor by applying a one-dimensional energy conservation equation to many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate which is integrated to calculate the substrate current. Comparisons of simulations and experimental I-V curves for both simple and LDD MOSFETs are presented. Outstanding agreement has been obtained over a wide range of bias conditions and channel lengths.<>

Keywords

impact ionisation; insulated gate field effect transistors; semiconductor device models; substrates; I-V curves; LDD MOSFET; Si; average energy; bias conditions; channel lengths; energy-dependent two-dimensional substrate current model; impact ionization rate; multicurrent contour model; one-dimensional energy conservation equation; post-processor; simple MOSFET; simulation; submicrometer NMOSFET; two-dimensional representation; Energy conservation; Equations; Hot carriers; Impact ionization; Instruments; MOS devices; Monitoring; Silicon; Steady-state; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192837

Filename

192837