Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT´s grown by MBE

Author

Malik, Roger J. ; Chand, Naresh ; Nagle, Julien ; Ryan, Robert W. ; Alavi, Kambiz ; Cho, Alfred Y.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

13

Issue

11

fYear

1992

Firstpage

557

Lastpage

559

Abstract

Temperature-dependent measurements from 25 to 125 degrees C have been made of the DC I-V characteristics of HBTs with GaAs and In/sub 0.53/Ga/sub 0.47/As collector regions. It was found that the GaAs HBTs have very low output conductance and high collector breakdown voltage BV/sub CEO/>10 V at 25 degrees C, which increases with temperature. In striking contrast, the In/sub 0.53/Ga/sub 0.47/As HBTs have very high output conductance and low BV/sub CEO/ approximately 2.5 V at 25 degrees C, which actually decreases with temperature. This different behavior is explained by the >10/sup 4/ higher collector leakage current, I/sub CO/, in In/sub 0.53/Ga/sub 0.47/As compared to GaAs due to bandgap differences. It is also shown that device self-heating plays a role in the I-V characteristics.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; 10 V; 2.5 V; 25 to 125 degC; AlGaAs-GaAs; AlInAs-GaInAs; DC I-V characteristics; HBT; III-V semiconductors; In/sub 0.53/Ga/sub 0.47/As collector regions; MBE; bandgap differences; collector breakdown voltage characteristics; collector leakage current; output conductance; self-heating; temperature dependence; Bipolar integrated circuits; Breakdown voltage; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Indium gallium arsenide; Leakage current; Photonic band gap; Temperature dependence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192838

Filename

192838