Stress current behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT´s with polyimide passivation

Author

Tanaka, Shin-ichi ; Kashahara, K. ; Shimawaki, Hidenori ; Honjo, Kazuhiko

Author_Institution

NEC Corp., Ibaraki, Japan

Volume

13

Issue

11

fYear

1992

Firstpage

560

Lastpage

562

Abstract

InAlAs/InGaAs and AlGaAs/GaAs HBTs, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization method is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBTs, InAlAs/InGaAs HBTs are stable up to a current density of 1.5*10/sup 5/ A/cm/sup 2/, indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBTs in terms of the stressing effect on the surface recombination along emitter junction periphery.<>

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; reliability; semiconductor device testing; AlGaAs:Be-GaAs; HBT material difference; III-V semiconductor; InAlAs-InGaAs:Be; base current; current density; excessive forward current; fabrication; polyimide passivation; polyimide planarization; reliability; short-term degradation; stress current; surface recombination; Degradation; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Planarization; Polyimides; Stress; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192839

Filename

192839