Title :
Analysis of the subthreshold slope and the linear transconductance techniques for the extraction of the capacitance coupling coefficients of floating-gate devices
Author :
Wong, M. ; Liu, D.K.-Y. ; Huang, S.S.-W.
Abstract :
A critical investigation of the relationship between the floating gate and the accessible terminal voltages reveals that the gate coupling coefficient is overestimated by the traditional expressions obtained from the approximate analysis of the subthreshold slope and the linear transconductance techniques. The investigation further indicates that the subthreshold slope technique is preferred, because the corrections can be easily estimated using the results of auxiliary measurements involving the source and drain coupling coefficients.<>
Keywords :
capacitance; insulated gate field effect transistors; inversion layers; semiconductor device testing; FAMOS devices; I-V characteristics; accessible terminal voltages; capacitance coupling coefficients; drain coupling coefficients; floating-gate devices; inversion layer capacitance; linear transconductance; source coupling coefficients; subthreshold slope; Capacitance; Capacitors; Equations; Instruments; Process design; Semiconductor process modeling; Substrates; Threshold voltage; Transconductance; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
