Title :
Monolithic, GaInNAsSb VCSELs at 1.46 μm on GaAs by MBE
Author :
Wistey, M.A. ; Bank, S.R. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S.
Author_Institution :
Solid State Photonics Lab., Stanford Univ., CA, USA
Abstract :
Lasing at 1.460 μm from a monolithic, GaInNAsSb
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; surface emitting lasers; 1.460 micron; GaInNAsSb; MBE; distributed Bragg reflector; monolithic VCSEL; multiple transverse modes; pulsed lasing; quantum wells; thermal mounting; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031139
