The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta

Author

Chen, Jian ; Assaderaghi, Fariborz ; Ko, Ping-Keung ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

13

Issue

11

fYear

1992

Firstpage

572

Lastpage

574

Abstract

An off-state leakage current unique for short-channel SOI MOSFETs is reported. This off-state leakage is the amplification of gate-induced-drain-leakage current by the lateral bipolar transistor in an SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for 1/4 mu m SOI devices. This can pose severe constraints in future 0.1 mu m SOI device design. A novel technique was developed based on this mechanism to measure the lateral bipolar transistor current gain beta of SOI devices without using a body contact.<>

Keywords

gain measurement; insulated gate field effect transistors; leakage currents; semiconductor-insulator boundaries; 0.25 micron; floating body; gate-induced-drain-leakage; lateral bipolar current gain; lateral bipolar transistor; off-state leakage current; short-channel SOI MOSFET; Bipolar transistors; CMOS technology; Current measurement; Gain measurement; Leakage current; MOS devices; MOSFET circuits; Semiconductor films; Substrates; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192844

Filename

192844