Title :
The enhancement of gate-induced-drain-leakage (GIDL) current in short-channel SOI MOSFET and its application in measuring lateral bipolar current gain beta
Author :
Chen, Jian ; Assaderaghi, Fariborz ; Ko, Ping-Keung ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
An off-state leakage current unique for short-channel SOI MOSFETs is reported. This off-state leakage is the amplification of gate-induced-drain-leakage current by the lateral bipolar transistor in an SOI device due to the floating body. The leakage current can be enhanced by as much as 100 times for 1/4 mu m SOI devices. This can pose severe constraints in future 0.1 mu m SOI device design. A novel technique was developed based on this mechanism to measure the lateral bipolar transistor current gain beta of SOI devices without using a body contact.<>
Keywords :
gain measurement; insulated gate field effect transistors; leakage currents; semiconductor-insulator boundaries; 0.25 micron; floating body; gate-induced-drain-leakage; lateral bipolar current gain; lateral bipolar transistor; off-state leakage current; short-channel SOI MOSFET; Bipolar transistors; CMOS technology; Current measurement; Gain measurement; Leakage current; MOS devices; MOSFET circuits; Semiconductor films; Substrates; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
