Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

Author

Liu, Han-Yin ; Chou, Bo-Yi ; Hsu, Wei-Chou ; Lee, Ching-Sung ; Sheu, Jinn-Kong ; Ho, Chiu-Sheng

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

60

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

213

Lastpage

220

Abstract

This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H₂O₂) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al₂O₃ oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.

Keywords

MOSFET; Schottky gate field effect transistors; high electron mobility transistors; AlGaN-GaN; MOS HEMT performance; MOS HEMT reliability; Schottky gate HEMT; enhanced device characteristics; gate dielectric layer; gate leakage current; hydrogen peroxide oxidation; metal oxide semiconductor high electron mobility transistor; surface passivation layer; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage current; Logic gates; Oxidation; Performance evaluation; $hbox{H}_{2}hbox{O}_{2}$ oxidation; AlGaN/GaN; gate dielectric; metal–oxide–semiconductor (MOS) high electron mobility transistor (HEMT) (MOS-HEMT); surface passivation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2227325

Filename

6374662