Title :
Monolithic integration of 5 V CMOS and high-voltage devices
Author :
Huang, Qin ; Amaratunga, Gehan A J ; Humphrey, Jea ; Narayanan, E.M.S. ; Milne, W.I. ; Starbuck, C.M.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A fully CMOS-compatible HVIC technology has been developed that features 5 V high-performance digital CMOS with high-voltage devices of more than 400 V. This technology uses only one or two masks in addition to standard p-well CMOS technology. Design optimization has been achieved to meet the needs of both CMOS and high-voltage devices. A large number of different devices are available in this technology, including bipolar transistors, lateral MOS gate power devices, and high-voltage p-channel power devices.<>
Keywords :
CMOS integrated circuits; integrated circuit technology; power integrated circuits; 400 V; 5 V; CMOS-compatible HVIC technology; bipolar transistors; design optimisation; high-performance digital CMOS; high-voltage devices; high-voltage p-channel power devices; lateral MOS gate power devices; masks; monolithic integration; p-well CMOS technology; Bipolar transistors; CMOS digital integrated circuits; CMOS process; CMOS technology; Conductivity; Design optimization; Epitaxial layers; Isolation technology; Monolithic integrated circuits; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
