Title :
Extraction of series-resistance-independent MOS transistor model parameters
Author :
Karlsson, Peter R. ; Jeppson, Kjell O.
Author_Institution :
Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.<>
Keywords :
SPICE; carrier mobility; insulated gate field effect transistors; semiconductor device models; MOS transistor model parameters; external drain resistors; external source resistors; intrinsic SPICE level-3 MOS parameters; maximum drift velocity; mobility reduction factor; saturation field factor; series resistance; simulations; static feedback factor; Circuit simulation; Data mining; Electron mobility; Feedback; MOSFETs; Resistors; SPICE; Solid state circuits; Threshold voltage; Transistors;
Journal_Title :
Electron Device Letters, IEEE
