DocumentCode
849136
Title
Trench-gate base-resistance-controlled thyristors (UMOS-BRTs)
Author
Baliga, B. Jayant
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume
13
Issue
12
fYear
1992
Firstpage
597
Lastpage
599
Abstract
Two base-resistance-controlled thyristor (BRT) structures with trench (UMOS) gate regions are described. A model for the maximum controllable current density for these devices is proposed and demonstrated to agree well with experimental results obtained on devices with 600-V forward-blocking capability.<>
Keywords
current density; metal-insulator-semiconductor devices; semiconductor device models; thyristors; 600 V; UMOS gate regions; base-resistance-controlled thyristors; forward-blocking capability; maximum controllable current density; model; trench gate regions; Anodes; Cathodes; Commercialization; Conductivity; Current density; Fingers; Insulated gate bipolar transistors; Insulation; Low voltage; Thyristors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.192856
Filename
192856
Link To Document