Dependence of plasma-induced oxide charging current on Al antenna geometry

Author

Shin, Hyungcheol ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

13

Issue

12

fYear

1992

Firstpage

600

Lastpage

602

Abstract

The dependence of the plasma-induced oxide charging current on Al electrode geometry has been studied. The stress current is collected only through the electrode surfaces not covered by the photoresist during plasma processes and therefore is proportional to the edge length of the electrode during etching and proportional to the electrode area during photoresist ashing. Knowing the measured oxide charging currents, one should be able to predict the impact of these processes on oxide integrity and interface stability for a given antenna geometry more accurately.<>

Keywords

aluminium; electrodes; metal-insulator-semiconductor devices; photoresists; sputter etching; static electrification; Al electrode geometry; Al-SiO/sub 2/-Si; MOS capacitors; antenna geometry; electrode area; electrode edge length; interface stability; oxide integrity; photoresist ashing; plasma processes; plasma-induced oxide charging current; stress current; Antenna measurements; Electrodes; Etching; Geometry; Plasma applications; Plasma measurements; Plasma stability; Resists; Stress; Surface charging;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192857

Filename

192857