Title :
Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs
Author :
Cristoloveanu, S. ; Gulwadi, S.M. ; Ioannou, D.E. ; Campisi, G.J. ; Hughes, H.L.
Author_Institution :
Lab. de Phys. des Composants a Semicond., Enserg, Grenoble, France
Abstract :
The characteristics of the front and back channels of 1- mu m-long SIMOX MOSFETs were measured before and after various types of periods of hot-electron stress, and a comparison between the induced degradations was made. The back channel degrades much more severely than the front channel for both partially depleted and fully depleted devices. Fully depleted MOSFETs (140-nm-thick) are favorably contrasted with partially depleted ones (300-nm-thick) as to their vulnerability to hot-carrier-induced damage. Although defects are always located at and/or near the interface of the stressed channel, they may influence the properties of the opposite channel (via interface coupling) in fully depleted MOSFETs.<>
Keywords :
SIMOX; hot carriers; insulated gate field effect transistors; semiconductor device testing; 1 micron; 140 nm; 300 nm; SIMOX MOSFETs; back channels; front channel; fully depleted devices; hot-carrier-induced damage; interface coupling; interface defects; partially depleted MOSFET; Annealing; DNA; Degradation; Hot carriers; MOSFETs; Semiconductor films; Silicon on insulator technology; Stress measurement; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
