39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology

Author

Hafizi, Madjid ; Jensen, Joseph F. ; Metzger, Robert A. ; Stanchina, William E. ; Rensch, David B. ; Allen, Young K.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

13

Issue

12

fYear

1992

Firstpage

612

Lastpage

614

Abstract

A static divide-by-4 frequency divider operating at 39.5 GHz with a corresponding gate delay of 12.6 ps was implemented using InP-based HBT technology. The AlInAs/GaInAs HBT devices utilized in the divider incorporated a graded emitter-base (E-B) junction and had a unity gain cutoff frequency, maximum frequency of oscillation, and current gain beta of 130 GHz, 91 GHz, and 39, respectively. The divider was operated with a 3-V power supply and consumed a total power of 425 mW (77 mW per flip-flop). The divider functional yield was over 90%. The operating frequency of this circuit is the highest ever reported for a static divider.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 12.6 ps; 130 GHz; 39.5 GHz; 425 mW; 91 GHz; AlInAs-GaInAs; HBT technology; InP; current gain; functional yield; gate delay; graded emitter base junction; maximum frequency of oscillation; operating frequency; power consumption; static frequency divider; unity gain cutoff frequency; Circuits; Cutoff frequency; Delay; Doping; Energy consumption; Flip-flops; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Power supplies;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192861

Filename

192861