Title :
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
Author :
Jiongjiong Mo ; Lind, Erik ; Wernersson, Lars-Erik
Author_Institution :
Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
Abstract :
The design of the InP drain layer in asymmetric InGaAs/InP MOSFETs has been studied experimentally. The influence of doping and thickness of the InP drain has been carefully measured and compared with the performance with an InGaAs drain, regarding the output conductance, the voltage gain, and the leakage current. It is shown that the introduction of an undoped InP spacer has a profound effect on the transistor characteristics. Finally, the effect of a gate-connected field plate at the InP drain side has also been studied both in dc and RF data.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; leakage currents; semiconductor device models; InGaAs-InP; InP drain layer; asymmetric InGaAs-InP MOSFET; doping; gate-connected field plate; leakage current; output conductance; undoped InP spacer; voltage gain; Doping; Indium gallium arsenide; Indium phosphide; Leakage currents; Logic gates; MOSFET; Tunneling; III--V MOSFET; III-V MOSFET; band-to-band tunneling; drain engineering; leakage current; leakage current.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2375913
