Title :
Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate
Author :
Tien, Norman C. ; Chen, Jianhui ; Fernandez, J.M. ; Wieder, H.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
The fabrication, structure, and properties of unstrained modulation-doped, 1- mu m-long and 10- mu m-wide gate, field effect transistors made of In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/As/sub 0.71/As heterojunctions grown on GaAs substrates using compositionally step-graded buffer layers are described. These devices have a transconductance of 335 mS/mm, f/sub max/ of 56 GHz, and a gate breakdown voltage of 23.5 V.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 23.5 V; 335 mS; 56 GHz; GaAs substrates; In/sub 0.3/Ga/sub 0.7/As-In/sub 0.29/Al/sub 0.71/As; MODFET; compositionally step-graded buffer layers; gate breakdown voltage; maximum frequency of oscillation; transconductance; Buffer layers; Electron mobility; Epitaxial layers; FETs; Fabrication; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Substrates;
Journal_Title :
Electron Device Letters, IEEE
