DocumentCode :
849255
Title :
Selective nucleation and growth in 3% silicon steel
Author :
Heo, N.H. ; Kim, S.B. ; Choi, Y.S. ; Cho, S.S. ; Chai, K.H. ; Han, S.O.
Author_Institution :
Korea Electr. Power Res. Inst., Taejon, South Korea
Volume :
38
Issue :
5
fYear :
2002
fDate :
9/1/2002 12:00:00 AM
Firstpage :
3195
Lastpage :
3197
Abstract :
Due to the stronger bond strength of the Fe-S molecule than that of the Fe-Fe molecule, at the stage of nucleation the surface-segregated sulfur hinders the systematical movement of matrix atoms into the exact positions at the surface for the formation of the [110][001]. When the [110] grains form selectively at the strip surface, even a subdivision of a low concentration of surface-segregated sulfur determines, therefore, the degree of disturbance against movement of matrix atoms and, thus, the direction of the [110]: the [110][001] at a much lower concentration of surface-segregated sulfur and the [110][uvw]≠[001] under a lower condition of segregated sulfur. Due to the relatively higher mobility of matrix atoms, the probability that, at a fixed final reduction, the [110] grains survive through the selective growth of [100] grains and have finally a chance for selective growth decreases with increasing heating rate.
Keywords :
ferromagnetic materials; grain growth; iron alloys; nucleation; silicon alloys; surface segregation; Fe-Si:S; bond strength; selective grain growth; selective nucleation; silicon steel; sulfur surface segregation; Annealing; Etching; Furnaces; Heating; Hydrogen; Kinetic theory; Shape; Silicon; Steel; Strips;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2002.802412.
Filename :
1042495
Link To Document :
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