Title :
The inverse-narrow-width effect of LOCOS isolated n-MOSFET in a high-concentration p-well
Author :
Ohe, K. ; Yabu, T. ; Kugo, S. ; Umimoto, H. ; Odanaka, S.
Author_Institution :
Matsushita Electric Ind. Co., Osaka, Japan
Abstract :
The inverse-narrow-width effect (INWE) of a LOCOS-isolated n-MOSFET formed in high concentration p-wells is described. The threshold behavior is characterized as a function of the concentration of p-well, using experimental data and three-dimensional process/device simulations. In a high-concentration p-well, the devices with a LOCOS isolation show the INWE, which was observed in trench-isolated devices. This effect is enhanced with increase of the p-well concentration. The INWE in the LOCOS-isolated MOSFET is explained by the boron segregation phenomenon during LOCOS process and boron redistribution.<>
Keywords :
boron; doping profiles; insulated gate field effect transistors; semiconductor process modelling; semiconductor technology; LOCOS-isolated n-MOSFET; SMART; Si:B; high-concentration p-well; impurity profiles; inverse-narrow-width effect; p-well concentration; redistribution; segregation; three-dimensional process/device simulations; threshold behavior; trench-isolated devices; Boron; Doping profiles; Implants; Impurities; Length measurement; MOSFET circuits; Resists; Semiconductor films; Threshold voltage; Voltage measurement;
Journal_Title :
Electron Device Letters, IEEE
