Title :
Nitrogen-implanted SiC diodes using high-temperature implantation
Author :
Ghezzo, Mario ; Brown, Dale M. ; Downey, Evan ; Kretchmer, James ; Hennessy, William ; Polla, Dennis L. ; Bakhru, Hassaram
Author_Institution :
GE Corp. Res. & Dev., Schenectady, NY, USA
Abstract :
6H-SiC diodes fabricated using high-temperature nitrogen implantation up to 1000 degrees C are reported. Diodes were formed by RIE etching a 0.8- mu m-deep mesa across the N/sup +//P junction using NF/sub 3//O/sub 2/ with an aluminum transfer mask. The junction was passivated with a deposited SiO/sub 2/ layer 0.6 mu m thick. Contacts were made to N/sup +/ and P regions with thin nickel and aluminum layers, respectively, followed by a short anneal between 900 and 1000 degrees C. These diodes have reverse-bias leakage at 25 degrees C as low as 5*10/sup -11/ A/cm/sup 2/ at 10 V.<>
Keywords :
annealing; ion implantation; leakage currents; nitrogen; passivation; semiconductor diodes; semiconductor materials; silicon compounds; sputter etching; 25 degC; 900 to 1000 degC; Al transfer mask; N/sup +//P junction; NF/sub 3/; NF/sub 3/-O/sub 2/; Ni layers; RIE etching; SiC:N diodes; deposited SiO/sub 2/ layer; high-temperature implantation; passivation; reverse-bias leakage; short anneal; Aluminum; Annealing; Fabrication; Furnaces; Implants; Light emitting diodes; Nitrogen; Silicon carbide; Temperature; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
