Title :
An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors
Author :
Cunningham, Thomas J. ; Fossum, Eric R. ; Baier, Steven M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFETs) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods to reduce the gate current are discussed.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; tunnelling; Al/sub 0.75/Ga/sub 0.25/As-In/sub 0.25/Ga/sub 0.75/As-GaAs; CHFETs; DX center; I-V characteristics; activation energy; complementary heterojunction field-effect transistors; gate conduction; gate current; gate voltage; ionization energy; temperature dependence; temperature-activated resistance; thermionic emission; thermionic-field emission; tunneling; Carrier confinement; FETs; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Temperature dependence; Temperature measurement; Thermal resistance; Thermionic emission; Voltage;
Journal_Title :
Electron Device Letters, IEEE
