• DocumentCode
    849326
  • Title

    Demonstration of first 10 kV, 130 mΩ cm2

  • Author

    Alexandrov, P. ; Zhang, J. ; Li, X. ; Zhao, J.H.

  • Author_Institution
    United Silicon Carbide Inc., New Brunswick, NJ, USA
  • Volume
    39
  • Issue
    25
  • fYear
    2003
  • Firstpage
    1860
  • Lastpage
    1861
  • Abstract
    The first demonstration of a trenched-and-implanted
  • Keywords
    field effect transistor switches; ion implantation; isolation technology; junction gate field effect transistors; power field effect transistors; power semiconductor switches; semiconductor doping; silicon compounds; wide band gap semiconductors; 10 kV; ICP etching; SiC; current spreading effect; deep-trenched structures; doped drift layer; high blocking voltage; high power switching; normally-off field-effect transistor; self-alignment processes; surface passivation; trenched-and-implanted field-effect transistor; vertical junction field-effect transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20031214
  • Filename
    1255759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=849326