Title :
High-reliability InGaP/GaAs HBTs with 153 GHz fT and
Author :
Ohkubo, Y. ; Takagi, A. ; Amano, Y. ; Koji, T. ; Kashiwagi, K. ; Matsuoka, Y.
Author_Institution :
Res. Lab., Anritsu Corp., Atsugi, Japan
Abstract :
High-reliability high-performance InGaP/GaAs
Keywords :
III-V semiconductors; S-parameters; UHF bipolar transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; ion implantation; semiconductor device reliability; 153 GHz; 170 GHz; InGaP-GaAs; S-parameter; emitter-surrounding ledge; external collector region; heterojunction bipolar transistors; high-performance; high-reliability; high-speed operation; ion implantation; layer structure; long MTTF; severe bias conditions; transmission line model patterns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031181
