• DocumentCode
    849339
  • Title

    High-reliability InGaP/GaAs HBTs with 153 GHz fT and

  • Author

    Ohkubo, Y. ; Takagi, A. ; Amano, Y. ; Koji, T. ; Kashiwagi, K. ; Matsuoka, Y.

  • Author_Institution
    Res. Lab., Anritsu Corp., Atsugi, Japan
  • Volume
    39
  • Issue
    25
  • fYear
    2003
  • Firstpage
    1862
  • Lastpage
    1863
  • Abstract
    High-reliability high-performance InGaP/GaAs
  • Keywords
    III-V semiconductors; S-parameters; UHF bipolar transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; ion implantation; semiconductor device reliability; 153 GHz; 170 GHz; InGaP-GaAs; S-parameter; emitter-surrounding ledge; external collector region; heterojunction bipolar transistors; high-performance; high-reliability; high-speed operation; ion implantation; layer structure; long MTTF; severe bias conditions; transmission line model patterns;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20031181
  • Filename
    1255760
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=849339