Title :
Hot-carrier-induced degradation of threshold voltage in
Author :
Suganuma, M. ; Satoh, T. ; Tango, H.
Author_Institution :
Tokyo Polytech. Univ., Kanagawa, Japan
Abstract :
Threshold voltage shifts showed different behaviour under
Keywords :
elemental semiconductors; hot carriers; silicon; thin film transistors; Si; drain current; gate current; hot-carrier-induced degradation; p-channel low-temperature TFT; polysilicon thin-film transistors; power-time dependence; strong saturation stress; systematic DC stress bias; threshold voltage; weak saturation stress;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031145
