DocumentCode
849361
Title
Metal-oxide-semiconductor structure with Ge nanocrystals
Author
Das, K. ; Maikap, S. ; Dhar, A. ; Mathur, B.K. ; Ray, S.K.
Author_Institution
Dept. of Phys. & Meteorol., IIT, Kharagpur, India
Volume
39
Issue
25
fYear
2003
Firstpage
1865
Lastpage
1866
Abstract
Metal-oxide-semiconductor structures with germanium
Keywords
MIS structures; MOS capacitors; elemental semiconductors; flash memories; germanium; hysteresis; nanoparticles; photoluminescence; semiconductor quantum dots; tunnelling; C-V measurements; Ge; MOS capacitors; bias sweeping; cap gate oxides; charge storage characteristics; cross-sectional transmission electron micrographs; flash memory; germanium nanocrystals; hysteresis width; isolated nanocrystals; lattice fringes; metal-oxide-semiconductor structures; oxide matrix; photoluminescence; quantum confinement; quantum dot; rapid thermal annealing; sputter fabrication; trilayer dielectric stack; tunnelling oxides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20031146
Filename
1255762
Link To Document