Study of GaN Radiation Sensor After In-core Neutron Irradiation

Author

Mulligan, Padhraic ; Jie Qiu ; Jinghui Wang ; Cao, Lei R.

Author_Institution

Dept. of Mech. & Aerosp. Eng., Ohio State Univ., Columbus, OH, USA

Volume

61

Issue

4

fYear

2014

fDate

Aug. 2014

Firstpage

2040

Lastpage

2044

Abstract

GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 10¹⁶ n/cm². The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors´ performance showed insignificant changes after in-core neutron irradiation at 10¹⁵ n/cm².

Keywords

Schottky diodes; alpha-particle detection; gallium compounds; neutron detection; semiconductor counters; wide band gap semiconductors; GaN Schottky diode radiation detectors; GaN devices; alpha particle spectrum; capacitance-voltage relation; charge collection efficiency; current-voltage relation; freestanding GaN wafer; guard ring structure; in-core neutron irradiation; Capacitance-voltage characteristics; Detectors; Gallium nitride; Neutrons; Radiation effects; Schottky diodes; Temperature measurement; Alpha detector; gallium nitride; high radiation field;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2320816

Filename

6850095