Title :
Study of GaN Radiation Sensor After In-core Neutron Irradiation
Author :
Mulligan, Padhraic ; Jie Qiu ; Jinghui Wang ; Cao, Lei R.
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding GaN wafer with a guard ring structure. The detectors were irradiated with neutron fluences up to 1016 n/cm2. The current-voltage relation, capacitance-voltage relation, charge collection efficiency, and alpha particle spectrum before and after irradiation were measured to characterize the radiation resistance of GaN devices. The detectors´ performance showed insignificant changes after in-core neutron irradiation at 1015 n/cm2.
Keywords :
Schottky diodes; alpha-particle detection; gallium compounds; neutron detection; semiconductor counters; wide band gap semiconductors; GaN Schottky diode radiation detectors; GaN devices; alpha particle spectrum; capacitance-voltage relation; charge collection efficiency; current-voltage relation; freestanding GaN wafer; guard ring structure; in-core neutron irradiation; Capacitance-voltage characteristics; Detectors; Gallium nitride; Neutrons; Radiation effects; Schottky diodes; Temperature measurement; Alpha detector; gallium nitride; high radiation field;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2320816
