Title :
High Efficiency 293 GHz Radiating Source in 65 nm CMOS
Author :
Jameson, Samuel ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
Abstract :
This letter presents a J-band radiating source (284-301 GHz) based on a differential Colpitts oscillator with an on-chip antenna in 65 nm CMOS. The source radiates the third harmonic of the oscillation frequency, which is also generated in the voltage controlled oscillator (VCO) itself due to its large voltage signal. An integrated loop antenna serves also as the load inductance at the drains of the VCO transistors, acting as a choke at the fundamental and matched antenna at the third harmonic. The antenna has a directivity above +9 dBi across the tuning range. This frequency source has a DC-to-RF radiated power efficiency of 2.8%, a radiated power of -2.7 dBm and an EIRP of +6.4 dBm, taking a silicon area of only 0.26 mm2.
Keywords :
CMOS integrated circuits; harmonic generation; loop antennas; millimetre wave antennas; system-on-chip; voltage-controlled oscillators; CMOS; DC-to-RF radiated power efficiency; EIRP; J-band radiating source; VCO transistor; antenna directivity; choke; complementary metal oxide semiconductor; differential Colpitts oscillator; efficiency 2.8 percent; equivalent isotropically radiated power; frequency 284 GHz to 301 GHz; frequency source; fundamental antenna; high efficiency radiating source; integrated loop antenna; load inductance; matched antenna; on-chip antenna; silicon area; size 65 nm; third harmonic oscillation frequency generation; tuning range; voltage controlled oscillator; voltage signal; Antenna measurements; Antennas; CMOS integrated circuits; Harmonic analysis; Transistors; Tuning; Voltage-controlled oscillators; Antenna; CMOS; Colpitts; RF source; j-band; loop antenna; voltage controlled oscillator (VCO);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2316210
