• DocumentCode
    850100
  • Title

    High power singlemode GaInAs lasers with distributed Bragg reflectors

  • Author

    O´Brien, Stephen ; Parke, R. ; Welch, D.F. ; Mehuys, D. ; Scifres, D.

  • Author_Institution
    Spectra Diode Labs., San Jose, CA, USA
  • Volume
    28
  • Issue
    13
  • fYear
    1992
  • fDate
    6/18/1992 12:00:00 AM
  • Firstpage
    1272
  • Lastpage
    1273
  • Abstract
    High power singlemode strained GaInAs lasers have been fabricated which use buried second order gratings as distributed Bragg reflectors. The lasers operate in an edge emitting fashion with CW powers in excess of 110 mW with single longitudinal and transverse mode operation at 971.9 nm up to 42 mW.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 42 to 110 mW; 971.9 nm; CW powers; GaInAs; buried second order gratings; distributed Bragg reflectors; edge emitting; power lasers; semiconductors; strained layer lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920805
  • Filename
    144380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=850100