Title :
High power singlemode GaInAs lasers with distributed Bragg reflectors
Author :
O´Brien, Stephen ; Parke, R. ; Welch, D.F. ; Mehuys, D. ; Scifres, D.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
6/18/1992 12:00:00 AM
Abstract :
High power singlemode strained GaInAs lasers have been fabricated which use buried second order gratings as distributed Bragg reflectors. The lasers operate in an edge emitting fashion with CW powers in excess of 110 mW with single longitudinal and transverse mode operation at 971.9 nm up to 42 mW.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 42 to 110 mW; 971.9 nm; CW powers; GaInAs; buried second order gratings; distributed Bragg reflectors; edge emitting; power lasers; semiconductors; strained layer lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920805
