• DocumentCode
    850300
  • Title

    Mesoplasma breakdown in silicon junctions

  • Author

    Power, H.M.

  • Volume
    51
  • Issue
    3
  • fYear
    1963
  • fDate
    3/1/1963 12:00:00 AM
  • Firstpage
    500
  • Lastpage
    501
  • Keywords
    Breakdown voltage; Circuits; Delay effects; Electric breakdown; Light emitting diodes; P-n junctions; Plasma properties; Plasma temperature; Silicon; Switches;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1963.1890
  • Filename
    1443820