DocumentCode :
850300
Title :
Mesoplasma breakdown in silicon junctions
Author :
Power, H.M.
Volume :
51
Issue :
3
fYear :
1963
fDate :
3/1/1963 12:00:00 AM
Firstpage :
500
Lastpage :
501
Keywords :
Breakdown voltage; Circuits; Delay effects; Electric breakdown; Light emitting diodes; P-n junctions; Plasma properties; Plasma temperature; Silicon; Switches;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1963.1890
Filename :
1443820
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=850300
