22-GHz modulation bandwidth of long cavity DBR laser by using a weakly laterally coupled grating fabricated by focused ion beam lithography

Author

Bach, L. ; Kaiser, W. ; Reithmaier, J.P. ; Forchel, A. ; Gioannini, M. ; Feies, V. ; Montrosset, I.

Author_Institution

Univ. Wurzburg, Germany

Volume

16

Issue

1

fYear

2004

Firstpage

18

Lastpage

20

Abstract

A 22-GHz directly modulated 3-dB bandwidth could be obtained by 1.3-mm-long weakly laterally coupled distributed Bragg reflector lasers fabricated by focused ion beam lithography. In addition to a high bandwidth, the lasers show a stable emission spectrum with side-mode suppression ratios of more than 40 dB and output powers exceeding 20 mW.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; focused ion beam technology; gallium arsenide; gallium compounds; indium compounds; ion beam lithography; laser cavity resonators; laser modes; laser stability; optical fabrication; quantum well lasers; 1.3 mm; 20 mW; 22 GHz; GHz modulation bandwidth; GaAsP-InP; InGaAsP-InP quantum well laser; WDM; focused ion beam lithography; high bandwidth; long cavity DBR laser; output powers; side-mode suppression ratios; stable emission spectrum; weakly laterally coupled distributed Bragg reflector lasers; weakly laterally coupled grating; Bandwidth; Distributed Bragg reflectors; Gratings; Ion beams; Laser stability; Lithography; Optical coupling; Optical modulation; Power generation; Power lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.820463

Filename

1255937