Title :
Total Dose Failure Levels of Some Vlsics
Author :
King, E.E. ; Manzo, G.J.
Author_Institution :
Naval Research Laboratory Washington, D. C. 20375
Abstract :
Two types of devices representative of very-largescale-integration, 64k dynamic RAMs and 68000 microprocessors, have been studied in a total dose ionizing radiation environment. Both types of parts show an improved hardness compared to earlier test results for large-scale-integrated dynamic RAMs and microprocessors. This indicates that the previously developed downward trend of radiation hardness versus circuit complexity may not continue to prevail.
Keywords :
Content addressable storage; Current measurement; DRAM chips; Ionizing radiation; Microprocessors; Production; Space technology; Temperature; Thickness measurement; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1980.4331049
