High-performance quantum-dot superluminescent diodes

Author

Zhang, Z.Y. ; Wang, Z.G. ; Xu, B. ; Jin, P. ; Sun, Z.Z. ; Liu, F.Q.

Author_Institution

Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China

Volume

16

Issue

1

fYear

2004

Firstpage

27

Lastpage

29

Abstract

By inclining the injection stripe of a multiple layer stacked self-assembled InAs quantum dot (SAQD) laser diode structure of 6° with respect to the facets, high-power and broad-band superluminescent diodes (SLDs) have been fabricated. It indicates that high-performance SLD could be easily realized by using SAQD as the active region.

Keywords

III-V semiconductors; indium compounds; optical communication equipment; optical multilayers; quantum dot lasers; self-assembly; superluminescent diodes; wavelength division multiplexing; InAs; WDM; active region; broad-band superluminescent diodes; high-performance quantum-dot superluminescent diodes; injection stripe; multiple layer stacked self-assembled InAs quantum dot laser diode structure; wavelength division multiplexing; Coherence; Diode lasers; Optical pumping; Optical sensors; Power generation; Quantum dot lasers; Quantum dots; Semiconductor diodes; Superluminescent diodes; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.820481

Filename

1255940