DocumentCode
850442
Title
Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources
Author
Brown, D.B.
Author_Institution
Naval Research Laboratory Washington, D. C. 20375
Volume
27
Issue
6
fYear
1980
Firstpage
1465
Lastpage
1468
Abstract
A method for calculating electron transport in layered materials is described. It is applied to a problem of radiation damage in MOS capacitors irradiated with a Cu x-ray tube operated at 45 kV. The effects of photoelectron transport are found to be significant. A problem of energy deposition in x-ray lithography is also discussed. The dose in the SiO2 gate is found to be about equal to that in the x-ray photoresist. Electron transport effects are found to be small in this lithography problem.
Keywords
Absorption; Electrons; Ionization; Laboratories; MOS capacitors; MOS devices; Radiation effects; Resists; Testing; X-ray lithography;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1980.4331052
Filename
4331052
Link To Document