Simulations of Cascade Damage in Silicon

In an effort to better understand radiation damage to electronic materials, we use the binary-collision simulation code MARLOWE to model displacement cascades in silicon. We examine the average number of displacements produced by knock-on atoms as a function of their energy. The resulting vacancy-interstitial pairs are classified according to separation radius. We also examine a few particular cases of 100 keV cascades in silicon in order to highlight the importance that channeling has on the shape of displacement cascades.