The structure and maximal gain of CW-pumped GaP-AlGaP semiconductor Raman amplifier with tapers on both sides

Author

Saito, Shigeki ; Nishizawa, Jun-ichi ; Suto, Ken ; Kimura, Tomoyuki

Author_Institution

Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan

Volume

16

Issue

1

fYear

2004

Firstpage

48

Lastpage

50

Abstract

GaP-AlGaP waveguide semiconductor Raman amplifiers (SRAs) tapered on both sides were fabricated by high-quality GaP-AlGaP liquid phase epitaxial growth using the temperature difference method with controlled vapor pressure (TDM-CVP), photolithography patterning, and reactive ion etching with PCl₃ gas. Although the finesse of the both-sides-tapered waveguide SRA is lower than previous values for straight or one-side-tapered waveguides, the CW-pumped gain was maximized, and a maximal gain of 4.2 dB was obtained. This letter presents the effect of tapered structures in SRA with CW pumping amplification.

Keywords

III-V semiconductors; Raman lasers; gallium compounds; liquid phase epitaxial growth; optical fabrication; optical pumping; semiconductor optical amplifiers; sputter etching; 4.2 dB; CW pumping amplification; CW-pumped; CW-pumped gain; GaP-AlGaP; GaP-AlGaP semiconductor Raman amplifier; PCl₃; controlled vapor pressure; liquid phase epitaxial growth; maximal gain; patterning; photolithography; reactive ion etching; tapered lasers; temperature difference method; Epitaxial growth; Etching; Liquid waveguides; Lithography; Pressure control; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission; Temperature control; Waveguide discontinuities;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.820114

Filename

1255947