DocumentCode :
850828
Title :
SAND80-0843 a SEM Technique for Experimentally Locating Latch-Up Paths in Integrated Circuits
Author :
Dressendorfer, P.V. ; Armendariz, M.G.
Author_Institution :
Division 2144 Sandia National Laboratories Albuquerque, New Mexico 87185
Volume :
27
Issue :
6
fYear :
1980
Firstpage :
1688
Lastpage :
1693
Abstract :
A technique has been developed which uses the scanning electron microscope in the electron-beam-induced-current mode to delineate latch-up paths in integrated circuits. It is rapid, easy to use, and requires no special sample preparation. The technique is discussed and applied to simple circuits for easy verification of its accuracy. Results on more complicated circuits are then presented. On some complex parts (1K-bit RAMS) multiple latch paths were found which could be active simultaneously and which depended on the history or internal state of the device.
Keywords :
CMOS integrated circuits; CMOS process; History; Ionizing radiation; Laboratories; Latches; Scanning electron microscopy; Space charge; Stress; Thyristors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1980.4331089
Filename :
4331089
Link To Document :
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