• DocumentCode
    850828
  • Title

    SAND80-0843 a SEM Technique for Experimentally Locating Latch-Up Paths in Integrated Circuits

  • Author

    Dressendorfer, P.V. ; Armendariz, M.G.

  • Author_Institution
    Division 2144 Sandia National Laboratories Albuquerque, New Mexico 87185
  • Volume
    27
  • Issue
    6
  • fYear
    1980
  • Firstpage
    1688
  • Lastpage
    1693
  • Abstract
    A technique has been developed which uses the scanning electron microscope in the electron-beam-induced-current mode to delineate latch-up paths in integrated circuits. It is rapid, easy to use, and requires no special sample preparation. The technique is discussed and applied to simple circuits for easy verification of its accuracy. Results on more complicated circuits are then presented. On some complex parts (1K-bit RAMS) multiple latch paths were found which could be active simultaneously and which depended on the history or internal state of the device.
  • Keywords
    CMOS integrated circuits; CMOS process; History; Ionizing radiation; Laboratories; Latches; Scanning electron microscopy; Space charge; Stress; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1980.4331089
  • Filename
    4331089