DocumentCode
850828
Title
SAND80-0843 a SEM Technique for Experimentally Locating Latch-Up Paths in Integrated Circuits
Author
Dressendorfer, P.V. ; Armendariz, M.G.
Author_Institution
Division 2144 Sandia National Laboratories Albuquerque, New Mexico 87185
Volume
27
Issue
6
fYear
1980
Firstpage
1688
Lastpage
1693
Abstract
A technique has been developed which uses the scanning electron microscope in the electron-beam-induced-current mode to delineate latch-up paths in integrated circuits. It is rapid, easy to use, and requires no special sample preparation. The technique is discussed and applied to simple circuits for easy verification of its accuracy. Results on more complicated circuits are then presented. On some complex parts (1K-bit RAMS) multiple latch paths were found which could be active simultaneously and which depended on the history or internal state of the device.
Keywords
CMOS integrated circuits; CMOS process; History; Ionizing radiation; Laboratories; Latches; Scanning electron microscopy; Space charge; Stress; Thyristors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1980.4331089
Filename
4331089
Link To Document