DocumentCode :
850840
Title :
On-chip decoupling capacitor optimization using architectural level prediction
Author :
Pant, M.D. ; Pant, Pankaj ; Wills, D.S.
Author_Institution :
Massachusetts Microprocessor Design Center, Intel Corp., Shrewsbury, MA, USA
Volume :
10
Issue :
3
fYear :
2002
fDate :
6/1/2002 12:00:00 AM
Firstpage :
319
Lastpage :
326
Abstract :
Switching activity-generated power-supply grid-noise presents a major obstacle to the reduction of supply voltage in future generation semiconductor technologies. A popular technique to counter this issue involves the usage of decoupling capacitors. This paper presents a novel design technique for sizing and placing on-chip decoupling capacitors based on activity signatures from the microarchitecture. Simulation of a typical processor workload (SPEC95) provides a realistic stimulation of microarchitecture elements that is coupled with a spatial power grid model. Evaluation of the proposed technique on typical microprocessor implementations (the Alpha 21264 and the Pentium II) indicates that this technique can produce up to a 30% improvement in maximum noise levels over a uniform decoupling capacitor placement strategy.
Keywords :
RLC circuits; VLSI; capacitors; circuit optimisation; circuit simulation; integrated circuit layout; integrated circuit modelling; integrated circuit noise; microprocessor chips; Alpha 21264; Pentium II; SPEC95; activity signatures; architectural level prediction; design technique; equivalent RLC power-bus network; ground bounce; maximum noise levels; microarchitecture; microprocessor implementations; on-chip decoupling capacitor optimization; placing; processor workload simulation; signal integrity; sizing; supply voltage reduction; switching activity-generated power-supply grid-noise; Capacitors; Counting circuits; Mesh generation; Microarchitecture; Microprocessors; Noise level; Power generation; Power grids; Power semiconductor switches; Voltage;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2002.1043335
Filename :
1043335
Link To Document :
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