• DocumentCode
    850857
  • Title

    Approaches to Radiation-Hardened I2L Technology

  • Author

    Bahraman, A. ; Chang, S.Y.

  • Author_Institution
    Northrop Corporation Northrop Research and Technology Center One Research Park Palos Verdes Peninsula, CA 90274
  • Volume
    27
  • Issue
    6
  • fYear
    1980
  • Firstpage
    1705
  • Lastpage
    1711
  • Abstract
    Design techniques are described for achieving radiation-hardened Schottky-base I2L (SBI2L) circuits. Radiation performance data are presented for this new technology and compared with results for conventional I2L. A design technique is also described for optimizing the intrinsic base sheet resistance in conventional or Schottky-base I2L. This concept is extended to VLSI designs. Finally, as an application of SBI2L, a new design is presented for a radiation-hardened static random-access-memory (RAM) cell.
  • Keywords
    Design optimization; Epitaxial layers; Equivalent circuits; Fabrication; Inverters; Isolation technology; Large scale integration; Radiation hardening; Switches; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1980.4331092
  • Filename
    4331092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=850857