DocumentCode :
851024
Title :
Intersubband absorption saturation in InGaAs-AlAsSb quantum wells
Author :
Gopal, A.V. ; Yoshida, Hiroyuki ; Neogi, A. ; Georgiev, N. ; Mozume, Teruo
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba
Volume :
38
Issue :
11
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
1515
Lastpage :
1520
Abstract :
We present intersubband absorption saturation studies in InGaAs-AlAsSb quantum wells. We carried out a density matrix calculation to simulate the pulsed excitation condition after including the dephasing time and the short pulse profile to estimate the saturation intensity (IS). We compare the calculated results with measurements for both resonant and nonresonant excitation. We also present our results on the effect of pulsewidth on Is estimation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; matrix algebra; optical saturable absorption; semiconductor quantum wells; InGaAs-AlAsSb; InGaAs-AlAsSb quantum wells; density matrix calculation; dephasing time; intersubband absorption saturation; nonresonant excitation; pulsed excitation condition; pulsewidth; resonant excitation; saturation intensity; short pulse profile; Absorption; Conducting materials; Laboratories; Physics; Pulse measurements; Resonance; Space vector pulse width modulation; Switches; Ultrafast electronics; Ultrafast optics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2002.804293
Filename :
1043350
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=851024
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