Title :
Secondary breakdown and hot spots in power transistors
Author :
Scarlett, R. ; Shockley, W.
Author_Institution :
Stanford Industrial Park, Palo Alto, Calif.
fDate :
3/1/1963 12:00:00 AM
Abstract :
Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
Keywords :
Corona; Electric breakdown; Hall effect; Indium; Intermetallic; Power transistors; Semiconductor films; Temperature; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1963.1964
